Parameters
- Adopting irradiation resistant amorphous silicon TFT sensor technology
- 25 x 30 cm ² Imaging area
- 100 µ m pixel size
- 16-bit ADC
- 10 Gigabit Ethernet interface, no frame loss for images
- Radiation resistant energy level 40 kV~225/450 kV
- High detection efficiency
- The software is easy to use and facilitates system integration
